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RFD16N05SM MOSFET Transistor

The RFD16N05SM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD16N05SM transistor as follows.

Circuit diagram symbol of the RFD16N05SM transistor

RFD16N05SM Transistor Specification

Transistor Code RFD16N05SM
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252AA
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.047Ohm
Power Dissipation (Maximum) PD 72W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 80nC

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