RFD16N05LSM MOSFET Transistor

The RFD16N05LSM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD16N05LSM transistor as follows.

RFD16N05LSM Transistor Specification

Transistor Code		RFD16N05LSM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	60W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		80nC

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