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RFD14N05LSM MOSFET Transistor

The RFD14N05LSM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD14N05LSM transistor as follows.

Circuit diagram symbol of the RFD14N05LSM transistor

RFD14N05LSM Transistor Specification

Transistor Code RFD14N05LSM
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252AA
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 48W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 40nC

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