RFD12N06RLESM MOSFET Transistor

The RFD12N06RLESM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD12N06RLESM transistor as follows.

RFD12N06RLESM Transistor Specification

Transistor Code		RFD12N06RLESM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		12nC

UXPython is not the creator or an official representative of the RFD12N06RLESM MOSFET transistor. You can download the official RFD12N06RLESM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRFR9024 MOSFET Transistor RFD8P05SM MOSFET Transistor IRFR3910 MOSFET Transistor IRLR2703 MOSFET Transistor IXTY3N50P MOSFET Transistor RFD4N06LSM MOSFET Transistor RFD14N05LSM MOSFET Transistor IRFR6215 MOSFET Transistor IRFR224 MOSFET Transistor HUF76629D3S MOSFET Transistor IRFR310 MOSFET Transistor RFD14N05SM MOSFET Transistor IRFR110 MOSFET Transistor HUF75321D3S MOSFET Transistor RFD16N06LESM MOSFET Transistor IRFR9210 MOSFET Transistor IRFR9014 MOSFET Transistor IRFR3303 MOSFET Transistor RFD8P06LESM MOSFET Transistor IXTY50N085T MOSFET Transistor