RFD10P03LSM MOSFET Transistor

The RFD10P03LSM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFD10P03LSM transistor as follows.

RFD10P03LSM Transistor Specification

Transistor Code		RFD10P03LSM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	65W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		30nC

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