RF1S60P03SM MOSFET Transistor

The RF1S60P03SM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S60P03SM transistor as follows.

RF1S60P03SM Transistor Specification

Transistor Code		RF1S60P03SM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	176W
Operating Junction Temperature (Maximum)		150°C

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