RF1S530SM MOSFET Transistor

The RF1S530SM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S530SM transistor as follows.

RF1S530SM Transistor Specification

Transistor Code		RF1S530SM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	79W
Operating Junction Temperature (Maximum)		150°C

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