RF1S40N10LESM MOSFET Transistor

The RF1S40N10LESM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S40N10LESM transistor as follows.

RF1S40N10LESM Transistor Specification

Transistor Code		RF1S40N10LESM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C

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