RF1S30P06SM MOSFET Transistor

The RF1S30P06SM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S30P06SM transistor as follows.

RF1S30P06SM Transistor Specification

Transistor Code		RF1S30P06SM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.065Ohm
Power Dissipation (Maximum)	PD	135W
Operating Junction Temperature (Maximum)		150°C

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