RF1S25N06SM MOSFET Transistor

The RF1S25N06SM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RF1S25N06SM transistor as follows.

RF1S25N06SM Transistor Specification

Transistor Code		RF1S25N06SM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263AB
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	72W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		80nC

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