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RD45HMF1 MOSFET Transistor

The RD45HMF1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD45HMF1 transistor as follows.

Circuit diagram symbol of the RD45HMF1 transistor

RD45HMF1 Transistor Specification

Transistor Code RD45HMF1
Transistor Type MOSFET
Control Channel Type N-Channel
Package CERAMIC_LARGE
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Power Dissipation (Maximum) PD 125W
Operating Junction Temperature (Maximum) 175°C

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