RD12MVP1 MOSFET Transistor

The RD12MVP1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD12MVP1 transistor as follows.

RD12MVP1 Transistor Specification

Transistor Code		RD12MVP1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C <

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