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RD100HHF1 MOSFET Transistor

The RD100HHF1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD100HHF1 transistor as follows.

Circuit diagram symbol of the RD100HHF1 transistor

RD100HHF1 Transistor Specification

Transistor Code RD100HHF1
Transistor Type MOSFET
Control Channel Type N-Channel
Package CERAMIC_LARGE
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Power Dissipation (Maximum) PD 176.5W
Operating Junction Temperature (Maximum) 175°C

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