RD09MUP2 MOSFET Transistor

The RD09MUP2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD09MUP2 transistor as follows.

RD09MUP2 Transistor Specification

Transistor Code		RD09MUP2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4A
Power Dissipation (Maximum)	PD	83W
Operating Junction Temperature (Maximum)		150°C <

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