RD07MVS2 MOSFET Transistor

The RD07MVS2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD07MVS2 transistor as follows.

RD07MVS2 Transistor Specification

Transistor Code		RD07MVS2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SLP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	3A
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C

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