RD02MUS1B MOSFET Transistor

The RD02MUS1B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD02MUS1B transistor as follows.

RD02MUS1B Transistor Specification

Transistor Code		RD02MUS1B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SLP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Power Dissipation (Maximum)	PD	21.9W
Operating Junction Temperature (Maximum)		150°C

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