RD02MUS1 MOSFET Transistor

The RD02MUS1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD02MUS1 transistor as follows.

RD02MUS1 Transistor Specification

Transistor Code		RD02MUS1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SLP
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Power Dissipation (Maximum)	PD	21.9W
Operating Junction Temperature (Maximum)		150°C

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