RD00HHS1 MOSFET Transistor

The RD00HHS1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RD00HHS1 transistor as follows.

RD00HHS1 Transistor Specification

Transistor Code		RD00HHS1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-89
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.2A
Power Dissipation (Maximum)	PD	3.1W
Operating Junction Temperature (Maximum)		150°C

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