RCX330N25 MOSFET Transistor

The RCX330N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RCX330N25 transistor as follows.

RCX330N25 Transistor Specification

Transistor Code		RCX330N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FM
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.077Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Total Gate Charge		80nC

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