RCX120N25 MOSFET Transistor

The RCX120N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RCX120N25 transistor as follows.

RCX120N25 Transistor Specification

Transistor Code		RCX120N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FM
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Total Gate Charge		35nC

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