RCX080N20 MOSFET Transistor

The RCX080N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RCX080N20 transistor as follows.

RCX080N20 Transistor Specification

Transistor Code		RCX080N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FM
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.47Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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