RCD060N25 MOSFET Transistor

The RCD060N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RCD060N25 transistor as follows.

RCD060N25 Transistor Specification

Transistor Code		RCD060N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CPT3_SC63_SOT428
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.41Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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