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R6025ANZ MOSFET Transistor

The R6025ANZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6025ANZ transistor as follows.

Circuit diagram symbol of the R6025ANZ transistor

R6025ANZ Transistor Specification

Transistor Code R6025ANZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3PF
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 150W
Drain-Source Capacitance 2400pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 135nS
Total Gate Charge 88nC

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