R6020ANZ MOSFET Transistor

The R6020ANZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6020ANZ transistor as follows.

R6020ANZ Transistor Specification

Transistor Code		R6020ANZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.17Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		1660pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Total Gate Charge		65nC

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