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R6015ANZ MOSFET Transistor

The R6015ANZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6015ANZ transistor as follows.

Circuit diagram symbol of the R6015ANZ transistor

R6015ANZ Transistor Specification

Transistor Code R6015ANZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3PF
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.23Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 1120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Total Gate Charge 50nC

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