R6015ANZ MOSFET Transistor

The R6015ANZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6015ANZ transistor as follows.

R6015ANZ Transistor Specification

Transistor Code		R6015ANZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PF
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		1120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Total Gate Charge		50nC

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