R6015ANX MOSFET Transistor

The R6015ANX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6015ANX transistor as follows.

R6015ANX Transistor Specification

Transistor Code		R6015ANX
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FM
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		1120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		50nC

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