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R6010ANX MOSFET Transistor

The R6010ANX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6010ANX transistor as follows.

Circuit diagram symbol of the R6010ANX transistor

R6010ANX Transistor Specification

Transistor Code R6010ANX
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FM
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.43Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 720pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Total Gate Charge 25nC

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