R6006ANX MOSFET Transistor

The R6006ANX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6006ANX transistor as follows.

R6006ANX Transistor Specification

Transistor Code		R6006ANX
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220FM
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		4.5V

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