R6006AND MOSFET Transistor

The R6006AND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R6006AND transistor as follows.

R6006AND Transistor Specification

Transistor Code		R6006AND
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		CPT3_SC63_SOT428
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS

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