R5019ANJ MOSFET Transistor

The R5019ANJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the R5019ANJ transistor as follows.

R5019ANJ Transistor Specification

Transistor Code		R5019ANJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LPTS
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Total Gate Charge		55nC

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