QS8K2 MOSFET Transistor

The QS8K2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8K2 transistor as follows.

QS8K2 Transistor Specification

Transistor Code		QS8K2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT8
Transistor SMD Code		K02
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		4.6nC

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