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QS8K11 MOSFET Transistor

The QS8K11 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8K11 transistor as follows.

Circuit diagram symbol of the QS8K11 transistor

QS8K11 Transistor Specification

Transistor Code QS8K11
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSMT8
Transistor SMD Code K11
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.05Ohm
Power Dissipation (Maximum) PD 0.55W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 3.3nC

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