QS8J2 MOSFET Transistor

The QS8J2 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8J2 transistor as follows.

QS8J2 Transistor Specification

Transistor Code		QS8J2
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Transistor SMD Code		J02
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		20nC

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