QS8J13 MOSFET Transistor

The QS8J13 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8J13 transistor as follows.

QS8J13 Transistor Specification

Transistor Code		QS8J13
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Transistor SMD Code		J13
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		60nC

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