QS8J12 MOSFET Transistor

The QS8J12 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8J12 transistor as follows.

QS8J12 Transistor Specification

Transistor Code		QS8J12
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Transistor SMD Code		J12
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		40nC

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