QS8F2 MOSFET Transistor

The QS8F2 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS8F2 transistor as follows.

QS8F2 Transistor Specification

Transistor Code		QS8F2
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.061Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13nC

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