QS6U22 MOSFET Transistor

The QS6U22 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS6U22 transistor as follows.

QS6U22 Transistor Specification

Transistor Code		QS6U22
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.215Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		3nC

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