QS6K21 MOSFET Transistor

The QS6K21 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS6K21 transistor as follows.

QS6K21 Transistor Specification

Transistor Code		QS6K21
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Transistor SMD Code		K21
Drain-Source Voltage (Maximum)	VDS	45V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.42Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.5nC

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