QS6K1 MOSFET Transistor

The QS6K1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS6K1 transistor as follows.

QS6K1 Transistor Specification

Transistor Code		QS6K1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSMT6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.238Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.7nC

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