QS6J11 MOSFET Transistor

The QS6J11 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QS6J11 transistor as follows.

QS6J11 Transistor Specification

Transistor Code		QS6J11
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSMT6
Transistor SMD Code		J11
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.5nC

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