QM6020P MOSFET Transistor

The QM6020P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6020P transistor as follows.

QM6020P Transistor Specification

Transistor Code		QM6020P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	242A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		2415pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		508nC

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