QM6020AP MOSFET Transistor

The QM6020AP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6020AP transistor as follows.

QM6020AP Transistor Specification

Transistor Code		QM6020AP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	198A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		1565pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40.6nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		89nC

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