QM6015B MOSFET Transistor

The QM6015B is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6015B transistor as follows.

QM6015B Transistor Specification

Transistor Code		QM6015B
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	86.8W
Drain-Source Capacitance		224pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		25nC

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