QM6008G MOSFET Transistor

The QM6008G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6008G transistor as follows.

QM6008G Transistor Specification

Transistor Code		QM6008G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.2nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		5nC

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