QM6006M6 MOSFET Transistor

The QM6006M6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6006M6 transistor as follows.

QM6006M6 Transistor Specification

Transistor Code		QM6006M6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PRPAK5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		19.3nC

UXPython is not the creator or an official representative of the QM6006M6 MOSFET transistor. You can download the official QM6006M6 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

QM3016M6 MOSFET Transistor QM3018M6 MOSFET Transistor QM3022M6 MOSFET Transistor QM4006M6 MOSFET Transistor QM3006M6 MOSFET Transistor QM3016AM6 MOSFET Transistor QM3807M6 MOSFET Transistor QM3004M6 MOSFET Transistor QM3014M6 MOSFET Transistor QM3024M6 MOSFET Transistor QM3809M6 MOSFET Transistor