QM6003F MOSFET Transistor

The QM6003F is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM6003F transistor as follows.

QM6003F Transistor Specification

Transistor Code		QM6003F
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	23W
Drain-Source Capacitance		97.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.86nC

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