QM4306D MOSFET Transistor

The QM4306D is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM4306D transistor as follows.

QM4306D Transistor Specification

Transistor Code		QM4306D
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	52.1W
Drain-Source Capacitance		275pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		28nC

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