QM4006M6 MOSFET Transistor

The QM4006M6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM4006M6 transistor as follows.

QM4006M6 Transistor Specification

Transistor Code		QM4006M6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PRPAK5X6
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		193pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		18.8nC

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