QM4006D MOSFET Transistor

The QM4006D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM4006D transistor as follows.

QM4006D Transistor Specification

Transistor Code		QM4006D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	44.6W
Drain-Source Capacitance		193pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		18.8nC

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