QM3024N3 MOSFET Transistor

The QM3024N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the QM3024N3 transistor as follows.

QM3024N3 Transistor Specification

Transistor Code		QM3024N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	1.67W
Drain-Source Capacitance		194pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		10.6nC

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